Product advantages：

• High quality

          Cutting line width is narrow (taking ultraviolet collimation as an example, cutting line width + HAZ ≤ 20 ± 5 μ m) Small edge collapse (≤ 10 μ m）

• High efficiency

          UPH ≥ 10 (UV galvanometer: take 3-inch double mesa silicon diode wafer as an example, including automatic alignment time)

• Good stability

          The laser has high pulse stability (≤ 2% RMS) and high beam quality (M ² ≤1.2)

Sample display：

Cutting front - 3-inch double mesa diode wafer laser full cutting; Grain size: 300 * 300 μm, Wafer thickness 130 μm, Cutting channel thickness 30 μm.

Cutting back - 3-inch double mesa diode wafer laser full cutting; Grain size: 300 * 300 μm, Wafer thickness 130 μm, Cutting channel thickness 30 μm.